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Whether the field is AI data centers, industrial robotics, or electric vehicles, a common goal for design engineers is to improve power system performance. Optimizing the power transistor is central to this pursuit. Power MOSFETs can unlock full systems that are more performant and efficient.
Several power MOSFETS with improved efficiency, reliability, and safety have hit the market in recent weeks.
Microchip’s Power MOSFETs Achieve JANSF 300 Krad Capability
To meet demands for high-reliability components in aerospace and defense systems, Microchip has developed the JANSF2N7587U3 , a 100 V N-channel MOSFET qualified to JANSF standards. The device offers a total ionizing dose rating of 300 krad (Si).
To achieve this, Microchip used its proprietary radiation-hardened-by-design process to ensure stable performance under both total dose and single-event effects. As a result, the device offers scalable radiation hardness assurance profile across its voltage range from 100 V to 250 V. With the introduction of this device, Microchip completes its radiation-hardened MOSFET family under the MIL-PRF-19500/746 specification.
Beyond the radiation-hardening feature, the device offers low R DS (on) and low total gate charge to reduce power losses and improve switching efficiency, respectively. Currently, the FET is available in hermetically sealed ceramic packages for extreme environment applications, and in plastic packages using JANSR-qualified die for cost-sensitive applications, such as low Earth orbit.
Rohm’s Power MOSFETS for AI Servers
The 24/7 operation of AI servers places a great amount of stress, such as heat, shock, and vibration, on electronic components. To lower heat generation and de-stress server racks, Rohm developed a new generation of N-channel power MOSFETs .
Specifically optimized for AC-DC conversion with minimum power losses, the devices introduce a DFN5060-8S package that expands die area by 65% compared to conventional HSOP8 packages of the same size. The result is lower R DS (on) and improved thermal performance. With this package, the RS7E200BG (30 V) achieves 0.53 mΩ R DS (on) at V GS = 10 V, while the RS7N200BH (80 V) achieves 1.7 mΩ, both setting benchmarks in their class.
According to Rohm, the chip was also designed to improve heat dissipation and increase safe operating area (SOA) tolerance, the range of voltage and current within which a device can operate safely without damage. With increased SOA, the RS7E200BG now supports over 70 A at VDS = 12 V with a 1 ms pulse, doubling the SOA of prior designs.
SemiQ’s Gen3 SiC Power MOSFET Modules
To deliver higher efficiency and thermal performance in high-voltage power applications, SemiQ introduced its QSiC 1200 V Gen3 SiC MOSFET modules. Coming in a SOT-227 package, the family offers six devices, which vary in terms of on-resistance and other performance specifications.
One notable feature of these co-packaged devices is the incorporation of a Schottky barrier diode to reduce total switching losses to as low as 468 µJ. Another specification is avalanche energy rating, which quantifies the device's robustness under inductive load switching conditions when the voltage exceeds its breakdown voltage. SemiQ’s new devices have been successfully tested beyond 1400 V with an avalanche energy rating up to 800 mJ.
To guarantee efficiency, the devices feature a very low RDS(on), ranging from 8.4 to 80 mΩ. Since power losses appear as heat, SemiQ has designed the package to offer low junction-to-case thermal resistance (down to 0.23°C/W). Collectively, these specifications allow the device to support high power dissipation up to 536 W.
Infineon’s CoolSiC Power MOSFETs
Infineon recently developed the CoolSiC MOSFET 750 V G2 , a second-generation SiC FET that achieves ultra-low RDS(on) for automotive applications.
Designed for fast, reliable operation, it features industry-leading R DS (on) x Qfr values, along with optimized R DS (on) x Qoss and R DS (on) x QG to minimize switching losses and improve efficiency under dynamic load conditions. Meanwhile, a high VGS(th) combined with a low Crss/Ciss ratio may enhance noise immunity and switching stability. The device also integrates a dedicated driver source pin for precise gate control and uses Infineon’s proprietary die attach technology to provide thermal reliability.
RDS(on) options ranging from 8 mΩ to 140 mΩ, and all solutions achieve full AEC-Q101 qualification.
A Plethora of Power Improvements
Whatever the application, the power MOSFET is one of the most important components available to a design engineer. With improvements in packaging technology, architecture, and performance, the new releases from Microchip, Rohm, SemiQ, and Infineon all offer improved choices for engineers designing the next revisions of power systems.
